First principles and pseudopotential approaches have been used to investigate band structures and pressure dependence of the band-gaps of ordered zincblende Ge_(50)Sn_(50)alloy up to 9 GPa.

使用第一性原理和赝势方法研究了Ge_（50）Sn_（50）有序合金直到9 GPa压力下的能带结构和带隙的压力依赖性。