CMOS dual and quad analog switch.

CMOS双路和四路模拟开关。

CMOS switch which can work in ultra low power supply is designed.

设计一种能够工作在超低电源电压下的CMOS开关。

The circuit is simple and compatible with traditional CMOS processes.

该电路结构简单，制造工艺与传统的CMOS工艺兼容。

This paper presents the design method of a novel CMOS current conversion.

提出了一种新型的CMOS电流转换电路的设计方法。

This paper proposes a defect detection of CMOS camera based on local entropy.

基于局部熵，提出了基于局部熵的CMOS摄像头疵点检测方法。

Let's look first at the physical size of CCD or CMOS sensor used to capture your photographs.

首先我们来看看CCD或是CMOS的物理尺寸吧。

Based on P-well CMOS processes, a novel differential CMOS current conveyor is presented.

基于P阱CMOS工艺提出了一种新的差动输入电流传送器。

This circuit structure is simple and can be realized by the standard CMOS process easily.

该电路结构简单，易于实现，且制作工艺与标准CMOS工艺完全兼容。

The inductor and capacitor in CMOS process is an important issue in designing LNA and VCO.

CMOS工艺的电容和电感是设计lna、VCO等射频电路需要考虑的重要问题。

In the digital image performance testing system of CMOS camera, defect detection is crucial.

在CMOS摄像头数字图像性能检测系统中，疵点检测是关键内容。

A methodology to synthesise continous-time current-mode filters using CMOS OTAs is presented.

本文提出了利用CMOS OTA综合连续时间电流模式滤波器的方法。

This paper presents two CMOS practical circuits for the optimal Universal-Logic-Gate (ULG. 2).

本文提出了最佳通用逻辑门ulg。2的两种CMOS实用电路。

A new low-voltage low-power CMOS voltage reference operating in subthreshold region is presented.

提出了一种新型的低电压、低功耗、工作在亚阈值区的基准电压源。

The synthesis technique for multivalued CMOS circuits based on transmission function theory is discussed.

本文讨论了基于传输函数理论的多值CMOS电路综合技术。

This is an electronic book is on CMOS VLSI design principles and systems prospects, and I hope to have your help!

这是一本电子书，是关于CMOS VLSI设计原理和系统展望的，希望对您有所帮助！

The multiplexer can be constructed from either mechanical switches or solid-state devices (such ad CMOS switches).

多路开关可以用机械开关或者固态器件（例如CMOS）开关构成。

But there are a lot of smart people at Intel and they were able to reinvent the CMOS transistor using new materials.

不过，英特尔公司拥有大量聪明人，他们有能力发明使用新材料的单极型晶体管”。

Guided by the switch signal-theory, how to realize the threshold controlling in current-mode CMOS circuits is studied.

以开关信号理论为指导，对电流型CMOS电路中如何实现阈值控制进行了研究。

This paper describes the mechanism of radiation for CMOS IC, and gives out the method of design for radiation hardened IC.

本文叙述了CMOS集成电路的辐射损伤机理，并给出抗辐射加固集成电路的设计方法。

Fabricated with 90-nanometer low-power CMOS technology, the 32-bit PowerPC e300-based multimedia SoC is clockable up to 400MHz.

这个基于PowerPC e300的32位多媒体SoC采用90纳米的低功耗CMOS技术制程，时钟频率400MHz。

Generally, this memory is called CMOS, although it's not strictly required that it actually be implemented using that technology.

通常来说，这种内存都称为CMOS，尽管它们并非严格要求使用这种技术来实现。

Based on the above discussion, the half pixel offset staggered imaging principle that can be used in CMOS image sensors is presented.

在上述讨论的基础上，本文提出了CMOS图像传感器的半像素错位成像原理。

A sand, which was cured, distill silicon of it, then inpoure knowledge, it come into being CMOS chip, and CMOS chip change the world.

一粒沙子，经过人类加工，提取出硅元素， 再注入知识就形成了芯片，从而推动了世界的改变。

A design approach for low power CMOS low noise amplifier (LNA) is presented and it is compared with the traditional LNA design method.

针对低功耗电路设计的需求，提出了一种低功耗约束下CMOS低噪声放大器的设计方法，并与传统的设计方法进行了对比。

Though CMOS imaging technology is making inroads in consumer technology, there’s “still nothing like a huge CCD,” Tyson said, for high-end science.

Tyson认为：尽管CMOS成像技术正在走入消费电子，但是对于高端科学领域而言，“还没有东西比得上巨型CCD”。

During my graduate design term, I have taken part in design of CMOS image sensor system and analog chain from pixel to analog to digital convertor.

本人在毕业设计期间参加了CMOS图像传感器系统架构设计和从感光电路到模数转换器的整个模拟链的设计工作。

These capabilities are not available in standard CMOS and provide a dramatic improvement in performance over traditional sub-volt design approaches.

这些功能在标准CMOS里不可使用，显着改善了传统亚伏设计方法。

Due to the diversity of the faults and manufacturing defects in CMOS IC, some of the faults can neither be defected by voltage test nor by IDDQ test.

由于CMOS集成电路中的故障和制造缺陷是多种多样的，其中有些故障既不能被电压测试也不能被稳态电流测试方法检测出来。

The design technique for a CMOS four quadrant analog multiplier is presented, which is based on the characteristics of the MOSFET subthreshold region.

讨论了基于MOS晶体管亚阈值区特性的CMOS四象限模拟乘法器的设计。