In this paper, the area contact model of depletion layer width under avalanche breakdown in Si epitaxial wafer by a three-probe method is analysed. The theory accords with experimental results.

本文分析了三探针测试硅外延片中雪崩击穿时耗尽层宽度的面接触模型，理论和实验结果吻合。

Using the photovoltaic spectral response of epitaxial P-N junction, the paper suggests a method of determining the minority carrier diffusion length in N layer of N/P epitaxial silicon wafer.

本文提出了用N/P硅外延片的结光电压光谱响应确定N/P硅外延片中少子扩散长度的方法。

Further growth of continuous compound semiconductor thick films (15) or wafer is achieved by epitaxial lateral overgrowth using HVPE.

通过使用HVPE的外延横向过生长实现连续的化合物半导体厚膜(15)或晶片的进一步的生长。