The magnetoresistance effects of AMR elements were studied.

测量了AMR元件的磁电阻效应。

Sheldon:And of course the answer is giant magnetoresistance.

竞赛的目的是回答出正确的答案。

The magnetoresistance curves and microstructures of some samples are measured.

测量了样品的磁电阻曲线和微结构。

No magnetoresistance effect was observed in the temperature range of measurement.

在测量温度范围内，没有观测到磁电阻效应。

The contents for 1998~1999 include: (1) multilayer giant magnetoresistance materials;

这次内容包括：（ 1）多层膜巨磁电阻材料；

Tunneling magnetoresistance (TMR) effect of MTJ samples has been successfully studied.

研究MTJ样品的隧道结磁电阻(TMR)效应。

Giant magnetoresistance (GMR) materials is applied to feebleness magnetic field sensor.

巨磁电阻(GMR)材料可应用于弱磁场高灵敏度磁传感器。

Moreover, these magnetoresistance data can be fitted well with the theories of quantum interference effects.

而且磁阻数据可由量子干涉理论拟合的很好。

A new research field of magnetoelectronics has been developed since the discovery of giant magnetoresistance.

巨磁电阻效应的发现开拓了磁电子学的新领域。

Changing of material resistance with applied magnetic field intensity is called Giant magnetoresistance (GMR).

磁电阻效应是指材料的电阻随外加磁场变化而变化的现象。

"Once you see a magnetoresistance effect that's relatively large," says Stuart Solin of Washington University in St.

“一旦你看到一个磁阻效果比较大，”圣路易斯的华盛顿大学的斯塔特索林说：“你很容易想到这可能是技术上非常重要的”。

The magnetoresistance and electromagnetic transmission characteristic of samples were analyzed at room temperature.

在室温下研究了样品的电磁输运特性。

A magnetic head of the present application has a sensor which employs the extraordinary magnetoresistance (EMR) effect.

本发明的磁头具有利用异常磁致电阻(emr)效应的传感器。

The magnetoresistance of the granular films with two distinct magnetic phases has been calculated by using Born approximation.

同时与采用平面波近似时所得结果进行比较，并对相关问题进行讨论。

Comparing to the influence of the bias, the variation of the giant-magnetoresistance induced by change of temperature is smaller.

与偏压的影响相比，温度的改变所引起的巨磁电阻的变化相对较小，只有在温度变化较大时才有显著的影响。

New magneto- electric components made from giant magnetoresistance(GMR)materials have been successfully applied to computer storage.

用巨磁电阻（GMR）材料构成的磁电子学新器件，已成功地应用于计算机存储领域。

Especially, we have observed the special low-field magnetoresistance and anisotropic magnetoresistance effect of the Cu-coated system.

我们发现，这类体系在输运性质上有着特别的特征，复合体系在低场下展示了特殊的的磁电阻效应。

With the increasing research on giant magnetoresistance (GMR), convenient and fast testing system has become the basis of research on GMR.

随着巨磁电阻效应(GMR)研究的广泛开展，方便、快速的磁电阻测试已成为研究GMR效应的基础。

The structure, electrical and magnetic properties as well as colossal magnetoresistance(MR) of the bulk samples were researched in detail.

研究了块体样品的相结构，导电性质、磁学性质以及磁电阻效应。

The data of magnetoresistance can be accounted for by the contributions from the quenching of superconducting fluctuation and weak localization.

磁阻的测量结果可以通过超导涨落和弱定域化两个效应的贡献来解释。

One well-established way in which data are stored employs magnetoresistance, a property discovered in 1856 by William Thomson, later Lord Kelvin.

通过磁阻对数据进行存储是一个切实可行的办法，磁阻是由威廉·汤姆逊(后称开尔文男爵)在1856年发现的一个磁场效应。

Since the LSMO films exhibit the colossal magnetoresistance effect, they have wide potential applications in the field of information technique.

由于其具有庞磁电阻效应，使得其在信息技术领域有着广阔的应用前景。

The application prospects of magnetic nanowires for magnetic recording, giant magnetoresistance, quantum disk and magnetic memory were discussed.

阐述了一维磁纳米线在磁记录、巨磁电阻、量子磁盘及高密度存储等领域的应用前景。

Materials with giant magnetoresistance effect have been extensively studied because of their potential application in magnetic recording and sensors.

由于巨磁电阻效应在磁记录设备和传感器的潜在应用，具有该效应的材料得到了广泛地研究。

The paper introduce the configuration and theory of the InSb magnetoresistance IR-Photoelectrie sensor, and study the output characteristic of the sensor.

本文介绍了锑化铟磁阻型光电传感器的结构及工作原理，并对锑化铟磁阻型光电传感器的输出特性进行了研究。

The results from the magnetoresistance measurements allow to determine the weak localization contribution to the temperature dependence of the resistivity.

由测量结果可确定弱定域化对电阻温度关系的贡献。

Materials with giant magnetoresistance effect (GMR) have been extensively studied because of their potential applications in magnetic recording and sensors.

由于巨磁阻效应材料在磁记录设备和传感器的潜在应用，具有该效应的材料得到了广泛地研究。

Since a magnetic field changes the resistance of ordinary metals by only a fraction of a percent, they dubbed this phenomenon "giant magnetoresistance," or GMR.

由于磁场变化对普通金属只会造成远远不到百份之一的电阻变化，这种现象被称为“巨磁电阻”或巨磁阻gmr。

Since a magnetic field changes the resistance of ordinary metals by only a fraction of a percent, they dubbed this phenomenon "giant magnetoresistance, " or GMR.

由于磁场变化对普通金属只会造成远远不到百份之一的电阻变化，这种现象被称为“巨磁电阻”或巨磁阻GMR。