The optimum annealing temperature is between 700 and 750℃.

实验结果表明，700~750℃范围为最佳退火温度。

The line parameters of the specimen decrease with the annealing temperature.

样品的线形参数均随退火温度升高而减小；

Objective : To explore a method for quicker identification of the optimal annealing temperature in PCR.

目的: 探讨和尝试一种较为迅速确定最佳退火温度的方法来扩增目的基因.

The stress impedance effects of the as-deposited films at different annealing temperature were also investigated.

测试了不同温度退火后，薄膜样品的应力阻抗效应。

With increasing annealing temperature, the coercivity Hc decreases and the saturation magnetization Ms increases.

随焙烧温度的升高，矫顽力下降，而饱和磁化强度升高。

Experimental results show that partial oxygen pressure, annealing temperature and annealing time are the key factors of fabrication of the new phase-transition vanadium dioxide thin films.

通过实验可以看出，氧气分压、退火温度、退火时间是影响制备新型相变型VO2薄膜的重要因素。

The stress impedance effects of the as - deposited films at different annealing temperature were also investigated.

测试了不同温度退火后,薄膜样品的应力阻抗效应.

And the influence of annealing temperature was also found to be caused by the expansion coefficient difference and martensitic transition.

晶化处理温度对因热胀系数差异带来的热拉应力因马氏体相变而致的相变压应力均有不同程度的影响。

Effects of annealing temperature on the microstructure and properties of pure vanadium manufactured by hot isostatic pressing were studied.

研究了不同退火温度对热等静压纯钒组织和力学性能的影响。

The effect of annealing temperature on the structure and electrochromic properties were discussed. Furthermore, coloration mechanism was discussed.

分析了热处理温度对薄膜的结构和电致变色性质的影响，讨论了薄膜的致色机理。