id=78688&lang=cz&st=idx。

id=78688&lang=cz&st=idx isn't intuitive.

CZ – abbreviation for Control Zone.

管制区的缩写。

One of the most affordable, beautiful rings is a CZ ring.

其中一个最经济实惠，漂亮的戒指是锆石环。

One Rhodopseudomonas CZ-2 strain was isolated from a turtle pond.

从露天养鳖池中分离到红假单胞菌CZ - 2菌株。

If you have a plane, ax+by+cz=d then the normal vector would just be .

如果你有一个平面，，，ax+by+cz=d，那么法向量就是。

Oxygen precipitation is an important subject of defect engineering for CZ silicon.

氧沉淀是直拉硅单晶缺陷工程的重要研究课题。

Automatic diameter control (ADC) is a key technique for the CZ crystal growth equipment.

自动直径控制(adc)技术是直拉法晶体生长设备的一项关键技术。

Ok, three unknowns, but solving for aX+bY+cZ = d is too much to ask for in a swim drill metaphor.

三个未知因素，好比解三元方程，对一个游泳练习的比喻来说好像太过分了。

Well, for example,if our surface is a plane, a slanted plane given by some equation, ax by cz = d.

比如说，假如我们的曲面是一个平面，由公式ax+by+cz=d给出的，一个倾斜的平面。

Hefei basin is a Mz-Cz residual basin generated from common action by Dabie orogen and Tanlu Tancheng?

合肥盆地是大别造山带和郯庐断裂带共同作用产生的中新生代残留盆地。

The experiment indicated that the liquid culture of CZ-2 could increase the weight of young turtle by 8.9%.

试验表明CZ - 2菌株培养液对幼鳖生长有促进作用，比对照提高了8.9%。

CZ-2C is a two-stage liquid propellant launch vehicle, which is suitable for launching heavier LEO satellite.

CZ - 2c是适用于发射低轨道、质量较大卫星的二级液体运载火箭。

The behavior of oxidation-induced stacking faults (OSF) in NCZ and CZ silicon single crystal was investigated.

采用直拉法生长普通和掺氮硅单晶，研究不同含氮浓度的晶体中氧化诱生层错（OSF）的行为。

This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.

介绍了直拉法生长单晶硅的基本原理及工艺条件。

GZK series Aero-Obstruction Lantern Control Box is the corollary equipment of CZ series Aero-Obstruction Lantern.

GZK系列智能型航空障碍灯集中控制箱，是GZ系列航空障碍灯的配套产品。

Hefei basin is a Mz-Cz residual basin generated from common action by Dabie orogen and Tanlu (TanchengLujiang) fault zone.

合肥盆地是大别造山带和郯庐断裂带共同作用产生的中新生代残留盆地。

The effect of dopants on oxygen precipitation and induced defects in heavily doped Czochralski (CZ) silicon is investigated.

研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响。

Silicon single crystals are produced mainly by Czochralski method (CZ) and magnetic field app-lied Czochralski method (MCZ).

多晶硅用直拉法(CZ)或磁场直拉法(mcz)拉制成单晶硅棒。

The influence of carbon on the defect formation during oxygen intrinsic gettering(IG) process has been studied for CZ silicon.

本文研究了直拉硅单晶的氧内吸杂（IG）工艺中，单晶的碳含量对缺陷形成的影响。

The results showed that 2091 alloy had better resistance to stress corrosion cracking than that of traditional 2024 (CZ) alloy.

并与传统的2024（CZ）合金进行了比较。 结果表明，2091合金具有较好的抗应力腐蚀能力。

The deep levels in electron irradiated CZ silicon single crystal grown in pure nitrogen protective atmosphere has been studied.

本文研究了电子辐照在氮保护气氛中生长的直拉硅单晶中引入的深能级。

The system concept, main sub systems, parameters and capacity of China′s new LM-1D(CZ-1D) small launch vehicle are also introduced.

同时介绍中国新的长征一号丁（CZ-1D）小型运载火箭的总体方案、主要系统、参数及运载能力。

The annihilation of grown-in oxygen precipitates in heavily As-doped CZ silicon by rapid thermal processing (RTP) was investigated.

研究了高温快速热处理（RTP）对重掺砷直拉硅片中的原生氧沉淀的消融作用。

The S /TT /CZ system could also decrease the compression set of NBR and endowed the NBR/ECO blend with good comprehensive properties.

低硫高促硫化体系S/TT/CZ可以使NBR胶料具有较低的压缩永久变形，而且赋予NBR/ECO共混胶料良好的综合性能。

An analysis on main reason for leaking of the mechanism airproof system of the CZ-model pumps is made and a resolution is put forward.

分析了CZ型泵机械密封泄漏的主要原因并提出了解决措施。

The fatigue life and residual strength after corrosion damage tests for laboratory specimens of LY12-CZ aluminum have been investigated.

对实验室环境下LY12-CZ铝合金进行了预腐蚀及疲劳寿命与剩余强度的预测研究。

Applying the infrared polariscope made by ourselves, the distribution of the stresses in crystals grown by CZ and FZ have been researched.

应用自制的红外光弹装置，研究了直拉单晶和区熔单晶的应力分布。

Objective: To investigate the therapeutical effects of Cangzhi granule (CZ) on patients with functional dyspepsia and its pharmacodynamics.

目的：观察苍脂颗粒(CZ)对功能性消化不良的治疗效果并进行药效学研究。