But at 1150℃ and 1250℃, clear grain boundary formed.

在1150℃和1250℃下，却形成了清晰的富铋晶界。

When the recrystallization completes, most of grain boundary is high angle grain boundary.

当再结晶过程完成时，绝大部分晶界为大角度晶界。

Diffusion of oxygen in the bonding coating and substrate is mainly grain-boundary diffusion. Grain-boundary diffusion coefficient is far greater than intragrain diffusion.

氧在粘结底层和基体中的扩散是以晶界扩散为主，晶界扩散系数远远大于晶内的扩散系数。

The formation of grain boundary step when machining poly - crystal is also examined.

还探讨了加工多晶材料时晶界台阶的形成.

The formation of grain boundary step when machining poly-crystal is also examined.

还探讨了加工多晶材料时晶界台阶的形成。

The grain boundary glassy phase is observed and confirmed directly by microdiffraction.

发现并用微观衍射分析证实了晶界处有玻璃相出现。

Based on above results a model of boundary migration was given and the effect of RE on the grain boundary migration, carbon atom diffusion and precipitation was discussed.

本文以此为依据设计了稀土渗入时的晶界迁移模型，并探讨了稀土对晶界迁移及对碳原子扩散与析出机制的影响。

By adjusting temperature, grain precipitation is limited by nucleation energy and only grain boundary precipitation exists.

通过调整温度, 颗粒沉淀受核化能量控制,就只有晶界沉淀存在.

The dependence of grain boundary on conductivity in NTC polycrystalline oxide semiconductor was discussed.

主要讨论NTC多晶氧化物半导体中晶界对电导的影响。

As shown in Fig. 1, precipitates microstructure confirms that near solvus temperature precipitation can limit grain boundary precipitation.

由调整温度，五谷降雨雪由生核能量限制并且唯一晶界降雨雪存在。