The method further includes determining a program state of the FinFET fuse.

上述方法还包括测定该鳍型场效应晶体管熔丝的一编程状态。

A method is described for fabricating and antifuse structure (100) integrated with a semiconductor device such as a FINFET or planar CMOS devise.

本发明提供了与如FINFET或平面CMOS器件的半导体器件集成的反熔断器结构(100)及其制造方法。